| 发明名称 |
Polysilicon structure and process for improving CMOS device performance |
| 摘要 |
A process for depositing polycrystalline silicon, including exposing a semiconductor substrate on which the polycrystalline silicon is to be deposited to a silicon containing gas and a temperature of about 680° C. to about 800° C.
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| 申请公布号 |
US6255200(B1) |
申请公布日期 |
2001.07.03 |
| 申请号 |
US19990312943 |
申请日期 |
1999.05.17 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALLANTINE ARNE W.;CHAN KEVIN K.;LANGDEAU GARY L.;RICE MICHAEL B. |
| 分类号 |
C23C16/24;H01L21/285;(IPC1-7):H01L21/36 |
主分类号 |
C23C16/24 |
| 代理机构 |
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