发明名称 METHOD OF SEPARATING WAFERS INTO INDIVIDUAL DIE
摘要 A method of separating a wafer into individual die is disclosed. The wafer includes a substrate with organic thin-film multiple layers. A portion of the organic multiple layers is etched along a scribe line with excimer laser to form a groove to expose a portion of the substrate before sawing the substrate along the scribe line with a saw blade. Plasma etching or ion beam etching or sand blasting is an alternative to the excimer laser.
申请公布号 CA2209884(C) 申请公布日期 2001.07.03
申请号 CA19972209884 申请日期 1997.07.09
申请人 NEC CORPORATION 发明人 ISHIDA, HISASHI
分类号 H05K3/00;H01L21/301;H01L21/304;H01L21/78;H05K3/46;(IPC1-7):H01L51/40 主分类号 H05K3/00
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