发明名称 METHOD OF MANUFACTURING ALUMINUM NITRIDE THIN FILM HAVING IMPROVED SURFACE AND BONDING CHARACTERISTIC
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing an aluminum nitride thin film improved in surface flatness and chemical and electrical properties within a thin film even at low process temperatures by applying nitrogen plasma treatment to an aluminum nitride thin film. SOLUTION: In the method of treating the aluminum nitride thin film for the purpose of improving surface and bonding characteristics, microwave plasma treatment is carried out, after the vapor deposition of the aluminum nitride thin film, as a step of aftertreatment for the thin film.</p>
申请公布号 JP2001181823(A) 申请公布日期 2001.07.03
申请号 JP20000333643 申请日期 2000.10.31
申请人 KOREA ADVANCED INST OF SCIENCE & TECHNOL 发明人 JAI YON RII;CHO MIN HEE;KIM HAE YEOL;KANG YOUN SEON
分类号 H01L21/321;C23C14/06;C23C14/58;C30B33/00;H01L21/203;H01L21/318;H01L41/22;H01L41/316 主分类号 H01L21/321
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