| 摘要 |
A method of fabricating a self-aligned stacked capacitor is provided, in which buried contacts and storage nodes are simultaneously formed by electroplating. In this method, a semiconductor substrate having exposed conductive areas is prepared for, and an interlayer insulative layer having buried contact holes that expose the conductive areas, is formed over the semiconductor substrate. A lower conductive seed layer is then formed over the entire surface of the innerwalls of the buried contact holes and the upper surface of the interlayer insulative layer. Non-conductor patterns having storage node holes that expose the buried contact holes, are then formed over the lower conductive seed layer on the upper surface of the interlayer insulative layer. A buried contact that fills the buried contact hole, and a lower electrode that fills the storage node hole, are then simultaneously formed by electroplating.
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