| 摘要 |
A method is provided for fabricating a semiconductor device on a structure, the method including forming a dielectric layer adjacent a gate conductor of the semiconductor device and above an LDD region of the structure and forming a first dielectric spacer adjacent a first portion of the dielectric layer adjacent the gate conductor and above a second portion of the dielectric layer above the LDD region. The method also includes introducing a dopant into a source/drain region of the structure and removing a third portion of the dielectric layer above the gate conductor, the second portion of the dielectric layer above the LDD region, and the first dielectric spacer. In addition, the method includes forming a first conductive layer above the gate conductor, adjacent the first portion of the dielectric layer and above the LDD region, and saliciding the first conductive layer above the gate conductor and above the LDD region to form a salicided first conductive layer.
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