发明名称 |
Multi-function semiconductor structure and method |
摘要 |
A multi-function semiconductor device is provided. The device includes a bipolar transistor and an FET formed in parallel. A semiconductor substrate is provided on an insulating layer. A source/emitter region and a drain region are formed in the semiconductor substrate and border first opposite sides of a body region therebetween. A gate is formed above the substrate between the source/emitter region and the drain region to form an FET having three terminals including the gate, the source/emitter region, and the drain region. A collector region is formed in the substrate abutting the drain region and extending further under the gate and the drain region. A bipolar transistor having three terminals is formed including a base region, the source/emitter, and the collector region. A shortest distance between the collector region and the source/emitter region defines a base width.
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申请公布号 |
US6255694(B1) |
申请公布日期 |
2001.07.03 |
申请号 |
US20000484198 |
申请日期 |
2000.01.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MANDELMAN JACK A.;NOWAK EDWARD J.;TONTI WILLIAM R. |
分类号 |
H01L21/84;H01L27/12;H01L29/73;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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