| 摘要 |
PURPOSE: Provided is a chemical amplification type photoresist composition containing a photosensitive polymer, which can be exposed by ArF eximer laser and has high dry etching resistance and excellent film adhesive property. CONSTITUTION: The chemical amplification type photoresist composition contains the photosensitive polymer (formula I) having a weight average molecular weight of 3,000-100,000, wherein R1 is a tert-butyl group, tetrahydropyranyl, or C1-C20 aliphatic hydrocarbon, R2 is hydrogen, hydroxyl, hydroxymethyl, 2-hydroxyethyl oxycarbonyl, or carboxylate, l/(l+m+n+p+q) is 0.0-0.4, m/(l+m+n+p+q) is 0.0-0.5, n/(l+m+n+p+q) is 0.5, p/(l+m+n+p+q) is 0.1-0.4, and q/(l+m+n+p+q) is 0.0-0.3. |
