| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce contact resistance by enlarging a contact area between a conductive layer and an active region. CONSTITUTION: In the method, a gate electrode(13) is formed over a field oxide layer(11) and the active region of a semiconductor substrate(10). Then, insulating spacers(17) are formed on sides of the gate electrode(13), and an etch stop layer(30) is formed over a resultant structure. Thereafter, the spacer(17) located on the active region is removed, while the opposite spacer(17) on the field oxide layer(11) remains. Next, an interlayer dielectric layer(19) having an opening for NC contact is formed on a resultant structure so that the opening contains the spacer-removed side of the gate electrode(13). After that, a diffusion barrier(21) is formed on bottom and side surfaces of the opening. In addition, the conductive layer(23) coplanar with the interlayer dielectric layer(19) is formed thereon. In the absence of the spacer on the active region, the contact area between the conductive layer(23) and the active region is increased.
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