| 摘要 |
PURPOSE: A method for forming a metal pattern of a semiconductor device is provided to obtain an excellent etch profile of the metal pattern with using existing facilities and without increasing etch selectivity of metal to photoresist. CONSTITUTION: The method includes forming in twice the metal pattern(251,253) to etch a metal layer thicker than a superjacent photoresist pattern. In the method, after a tungsten plug(230) is formed in an interlayer dielectric layer(210) so as to be connected with an impurity doping region(200a) in a substrate(200), an insulating pattern(245) such as an oxide layer is formed thereon. Next, to form the first metal pattern(251), the first metal layer is deposited in and over the insulating pattern(245) and then polished. Thereafter, the second metal layer for the second metal pattern(253) is deposited thereon and then etched through the superjacent photoresist pattern. Preferably, a barrier metal layer(262) and an anti-reflective layer(272) may be formed on the second metal pattern(253). After formation of the metal pattern(251,253) is completed, the photoresist pattern and the anti-reflective layer(272) are removed.
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