| 摘要 |
PURPOSE: A method for forming a semiconductor contact is provided to minimize damage of a silicide layer on a gate and a source/drain while etching and cleaning a contact hole. CONSTITUTION: The method includes performing twice a salicide process, namely, forming two self-aligned silicide layers(3,12). In the method, a titanium layer is formed on a semiconductor substrate(1) where the gate and the source/drain are formed, and then turned into the first titanium silicide layer(3) and a superjacent titanium nitride layer by a rapid thermal process with nitrogen ambience. Next, the titanium nitride layer and a non-reacted portion of the titanium layer are removed by wet etch, and a resultant structure is subjected to the second rapid thermal process to minimize resistance of the first titanium silicide layer(3). After that, the second titanium layer is formed, and the third rapid thermal process is performed to form the second titanium silicide layer(12) and the second titanium nitride layer. Next, the second titanium nitride layer and a non-reacted portion of the second titanium layer are removed, and an interlayer dielectric layer(5) is formed thereon. The contact hole(6) is then formed in the interlayer dielectric layer(5) by a selective etch using a photoresist pattern(PR1), and filled with conductive material to form the contact.
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