INTERNAL POWER SUPPLY VOLTAGE GENERATOR CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: An internal power supply voltage generator circuit of a semiconductor memory device is provided to improve a test coverage of the semiconductor memory device, by making a voltage level difference of internal voltages(Vperi,Varray) during a test of the internal voltage generator circuit equal to a voltage level difference during a normal operation. CONSTITUTION: The circuit comprises an external voltage input terminal applies an external voltage(Vext), and the first internal voltage generation part(100) supplies the first internal voltage(Vperi) dropped from the external voltage to peripheral circuits. The first internal voltage output terminal outputs the first internal voltage, and the second internal voltage generation part(200) generates the second internal voltage(Varray) by dropping the external voltage to a lower voltage level than the first internal voltage and supplies it to array circuits. The level difference between the first internal voltage and the second internal voltage is the first level difference. The second internal voltage output terminal outputs the second internal voltage. The first voltage boosting part(300) boosts the first internal voltage according to the external voltage if the external voltage is boosted above a fixed level, and the second voltage boosting part(400) boosts the second internal voltage according to the external voltage as maintaining the level difference with the first internal voltage as the first level difference if the external voltage is boosted above a fixed level.