| 摘要 |
PURPOSE: A method for fabricating a semiconductor device having a multilevel interconnection layer is provided to reduce the entire time required for the process of fabrication. CONSTITUTION: The method includes separately and simultaneously forming the first and second wafers, the first wafer having a transistor(43,44,45) and the second wafer having the interconnection layer(52). To form the first wafer, the transistor(43,44,45) is formed on the first semiconductor substrate(41) and covered with the first interlayer dielectric layer(46). Next, a contact(47) connected to the transistor(43,44,45) is formed in the first interlayer dielectric layer(46), and the first silicon layer(48) is formed over the first wafer. On the other hand, to form the second wafer, the interconnection layer(52) is formed on the second semiconductor substrate(53), and the second interlayer dielectric layer(51) is formed thereon. Next, a contact(50) connected to the interconnection layer(52) is formed in the second interlayer dielectric layer(51), and the second silicon layer(49) is formed over the second wafer. The first and second contacts(47,50) correspond exactly with each other. Thereafter, the second wafer is turned over and thermally attached to the first wafer. Here the confronting contacts(47,50) are melted into the attached silicon layers(48,49) and thereby connected to each other.
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