METHOD FOR BURYING GAP BY HIGH DENSITY PLASMA OXIDE LAYER AND DEPOSITION UNIT USED FOR THE SAME

摘要

PURPOSE: A method for burying a gap by a high density plasma oxide layer and a deposition unit used for the same are provided to bury a gap without a void by etching the first high density plasma oxide layer to reduce an aspect ratio of a gap and depositing the second high density plasma oxide layer thereon. CONSTITUTION: The first high density plasma oxide layer is deposited on an upper portion of a substrate(100) including a gap. The first high density plasma oxide layer is etched partially by using fluorine ions. The second high density plasma oxide layer(106) is deposited on an upper portion of the whole structure. The gap is buried by the second high density plasma oxide layer(106).