| 摘要 |
PURPOSE: A method for checking exposure of silicon substrate is provided to check an exposure of a silicon substrate with a color contrast using a resolution difference according to the depth of a contact hole and an aperture. CONSTITUTION: According to the method, a contact hole(207) is formed after forming a field oxide(203) and an oxide(205) on a silicon substrate(201) in sequence. And, a silicon nitride(209) acting as an insulation layer is formed on the contact hole. A spacer(211) is formed by etching the silicon nitride contacted to an upper part of the silicon substrate. Then, an aperture(213) is formed by etching the silicon substrate on a bottom surface of the contact hole by performing a poly-strain process. And, a P-oxide(215) is formed uniformly on a sidewall of the aperture and the contact hole using a chemical vapor deposition method. Then, a titanium film(217) is formed to increase a selectivity on the P-oxide.
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