LPCVD SYSTEM

摘要

PURPOSE: An LPCVD(Low Pressure Chemical Vapor Deposition) system is provided to prevent a concentration phenomenon of gas flow by changing a structure of a flange. CONSTITUTION: An outer tube(20) and an inner tube(30) are located at an upper portion of a flange(10). A seal cap(60) is located at a lower portion of the flange(20). The second support plate(1a) for loading an outer tube is located along an edge of an upper end of the first support plate(3). The third support plate(1b) sealed with a seal cap(60) is located along an edge of a lower end of the first support plate(3). A plurality of penetrating hole(g) is formed at the first support plate(3). The penetrating holes(g) are connected with a center hole(h) of the first support plate(3). A fixing plate(5) for loading an inner tube is formed along an inner wall of the first support plate(3). A gas inlet portion(7) for implanting a processing gas is formed at a predetermined portion of an inner wall of the first support plate(3) formed at a lower end of the fixing plate(5). A gas outlet portion(9) for exhausting a non-reaction gas is formed at a predetermined portion of an inner wall of the first support plate(3) formed at an upper end of the fixing plate(5).