METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to form stably a pocket implant region in a rapid thermal process by using a gate sidewall spacer of a double structure. CONSTITUTION: An isolation region(102) is formed on a p type silicon substrate(100). A gate oxide layer(104) and a conductive layer are formed on an active region of the silicon substrate(100). A gate electrode(106) is formed by etching the conductive layer. A buffer oxide layer(108) is formed on the gate electrode(106). An LDD region(110) is formed on an edge side of the gate electrode(106). The first insulating spacer(112) is formed on both sidewalls of the gate electrode(106). A pocket implant region(114) is formed on an edge portion of the first insulating spacer(112). The second insulating spacer(116) is formed on a sidewall of the first insulating spacer(112). A source/drain region is formed on an edge portion of the second insulating spacer(116).