METHOD FOR GROWING RUTILE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To grow a rutile single crystal free from crystal defect by changing the size of a seed crystal in the EGF process as one of the processes for growing rutile single crystals. SOLUTION: In a controlled furnace, a slit die 3 is installed in the starting melt 2 in a crucible 1 and the slit is used to allow the melt 2 to rise up to the upper face of the die 3 whereby a single crystal of the same shape as that of the slit die 3 is obtained and the single crystal is pulled up (the EFG process), the width of the slit die 3 is kept equal to that of the speed crystal whereby the objective single crystal 8 is obtained without crystal defect.