GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a light emitting element in a blue region, a violet region or an ultraviolet light region in a short wavelength. SOLUTION: An n-type GaN buffer layer 17, an Si-doped n-type GaAlN layer 18 (as an n-layer), a GaN layer 19 (as an active layer) and an Mg-doped GaAlN layer 20 (as a p-layer) are formed on a silicon carbide substrate 16. An SiO2 layer 22 is deposited on the Mg-doped GaAlN layer 20 (as the p-layer). After that, a window 20A is opened in a rectangular shape in a length of 1 mm and a width of 50 μm. A metal electrode is formed in the part of the window 20A in the Mg-doped GaAlN layer 20 (as the p-layer), and a metal electrode is formed in the Si-doped n-type GaAlN layer 18 (as the n-layer).