METHOD FOR FORMING SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To provide a forming method for a semiconductor which can shorten an operation time and lower manufacture cost by greatly decreasing the defect density of structure defects in the semiconductor layer, especially the density of penetration dislocation, without requiring complicated processes. SOLUTION: With this method for forming a semiconductor layer, a structural defect suppressing substance which suppresses structure defects in the semiconductor layer is supplied to then top surface of a substance layer, where the semiconductor layer is formed.