发明名称 THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To obtain an integrated CMOS circuit which requires preparation or evaporation of two different materials for forming a complementary device. SOLUTION: A CMOS integrated circuit is composed of thin film transistors of semiconductor formed of ambipolar organic material. Suitable material is tetracene and pentacene. In these CMOS devices, a uniform layer of tetracene or pentacene can be used in both an N-type (inversion) device and a P-type (accumulation) device.
申请公布号 JP2001177109(A) 申请公布日期 2001.06.29
申请号 JP20000350697 申请日期 2000.11.17
申请人 LUCENT TECHNOL INC 发明人 BATLOGG BERTRAM JOSEF;KLOC CHRISTIAN;SCHON JAN HENDRICK
分类号 H01L27/08;H01L21/8238;H01L27/092;H01L27/28;H01L29/786;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/786;H01L21/823;H01L51/00 主分类号 H01L27/08
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