SEMICONDUCTOR DEVICE, PRODUCING METHOD THEREFOR AND DESIGNING METHOD FOR WIRING

摘要

PROBLEM TO BE SOLVED: To improve the electro-migration resistance of aluminium wiring. SOLUTION: After an aluminium film 11 is formed on a silicon substrate 10, a hole 12 is formed in the wiring formation region of this aluminium film 11 so as to be vertically extended and afterwards, a copper layer 14 is embedded in this hole 12. After copper atoms composing the copper layer 14 are diffused into the aluminium film 11 by annealing the silicon substrate 10, the other region of the aluminium film 11 except for the wiring formation region is removed and wiring composed of the residual aluminium film 11 is formed.