| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which an suppress an increase in the contact resistance of an Al alloy wire in a connection hole, by preventing products of reaction on Al from being formed, when etching for forming the connection hole in an interlayer insulating film is carried out. SOLUTION: This manufacturing method for a semiconductor device has a stage for forming an amorphous TiOX film 18 on a 1st Al-Cu alloy film 15, a stage for forming a 1st Al alloy wire by patterning the amorphous TiOX film 18 and 1st Al-C alloy film 15, a stage for forming a 2nd interlayer insulating film 19 on the 1st Al alloy wire 15, a stage for forming a via hole 19a positioned on the 1st Al alloy wire 15 in the 2nd interlayer insulating film 19, a stage for forming a via hole 19a positioned on the 1st Al alloy wire 15 in the interlayer insulating film 19 by etching the interlayer insulating film 19, and a stage for forming a 2nd Al alloy wire in the via hole 19a and on the interlayer insulating film 19.
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