| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem such that it has been necessary to create an N-type region up to the deep position of a substrate to increase the sensitivity of a red color in a photodiode part and it was necessary to increase the shutter gate voltage of an OFD part considering the manufacturing margin of a photodiode N well since manufacturing scattering easily occurs in the potential of the photodiode part in operation. SOLUTION: A charge delivery control layer 17 is formed by implanting P-type ions into one parent body N well 15. At the same time, the parent body N well 15 is divided into a photodiode N well 16 and a drain 5 of OFD, so that the potential of the charge delivery control layer 17 also changes in the same direction as the potential of the photodiode N well 16 even if the potential of the photodiode N well 16 for composing a photodiode fluctuates, thus preventing the maximum amount of charge that can be accumulated from fluctuating and hence preventing the signal irregularity from being observed in saturation.
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