| 摘要 |
PROBLEM TO BE SOLVED: To obtain a capacitive element having a high capacitance with a small area. SOLUTION: The semiconductor integrated circuit device has capacitive elements having a dielectric film sandwiched with first and second electrodes. The capacitive elements have such a structure that a plurality of first and second electrodes are disposed so that the first and second electrodes mutually face in the plane direction and the thickness direction.
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