| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability in migration of main wiring material, such as aluminum, copper and the like. SOLUTION: A TiN fluoride layer 7 is present on the surface of a TiN film 6 comprising metallic material of high melting point deposited on a silicon oxide film 2 and a contact hole 3, and the main wiring material composed mainly of aluminum and the like is deposited thereon. The TiN fluoride layer 7 can be formed by treating the TiN film 6 by means of SF6 plasma. By this configuration mentioned, wettability of an aluminum alloy compared with the TiN layer free from process subject to plasma treatment, while the TiN fluoride layer 7 remairs conductive on the surface of the TiN film 6. As a result, the grain size of the aluminum alloy can be developed, resulting in improved resistance against migration.
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