| 摘要 |
PROBLEM TO BE SOLVED: To reduce adhesion of dust particles to wafer at dry etching of aluminum film formed thereon by making uniform an deposition film in an etching chamber, thereby preventing the depositions from being stripped. SOLUTION: First, chlorine ions or chlorine radicals are caused to react at depositions, i.e., aluminum component or fluorocarbon, in an etching chamber in order to remove the aluminum component by dry cleaning, and then fluorocarbon is caused to readhere to the remaining fluorocarbon by seasoning processing thus making uniform the deposition film.
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