发明名称 WAFER FOR EVALUATION OF METAL CONTAMINATION AND METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To evaluate a Cu contamination quantitatively without using an expensive measuring device. SOLUTION: A test wafer with a a-Si film 3 formed on a Si wafer 1 through a SiN film 2 is used for the evaluation. The Cu contamination is quantitatively evaluated by a degree of surface roughness of the a-Si film 3 of the test wafer.
申请公布号 JP2001174375(A) 申请公布日期 2001.06.29
申请号 JP19990361297 申请日期 1999.12.20
申请人 TOSHIBA CORP 发明人 KANEKO HISAFUMI;KAWANOUE TAKASHI;MATSUDA TETSURO;NADAHARA SOICHI
分类号 H01L21/02;G01N1/28;G01N33/00;(IPC1-7):G01N1/28 主分类号 H01L21/02
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