发明名称 |
WAFER FOR EVALUATION OF METAL CONTAMINATION AND METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To evaluate a Cu contamination quantitatively without using an expensive measuring device. SOLUTION: A test wafer with a a-Si film 3 formed on a Si wafer 1 through a SiN film 2 is used for the evaluation. The Cu contamination is quantitatively evaluated by a degree of surface roughness of the a-Si film 3 of the test wafer.
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申请公布号 |
JP2001174375(A) |
申请公布日期 |
2001.06.29 |
申请号 |
JP19990361297 |
申请日期 |
1999.12.20 |
申请人 |
TOSHIBA CORP |
发明人 |
KANEKO HISAFUMI;KAWANOUE TAKASHI;MATSUDA TETSURO;NADAHARA SOICHI |
分类号 |
H01L21/02;G01N1/28;G01N33/00;(IPC1-7):G01N1/28 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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