| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose adhesion property of a sealing layer is high at the time of sealing the electrode terminal forming face of a semiconductor element. SOLUTION: In the semiconductor device, a wiring pattern 20 where one end side is electrically connected to an electrode terminal 14 formed on the electrode terminal forming face and the other side is formed in a land part 20a connecting an outer connection terminal 24 is formed on the electrode terminal forming face of the semiconductor element 12. In the wiring pattern 20, metallic layers U and V formed of different metals are laminated and formed in layer shapes, and the side of the metallic layer U of the main part of the wring pattern 20 is formed to be dented to an inner side much more than the side of the metallic layer V formed just above the metallic layer. Thus, adhesion property between the wiring pattern 20 and the sealing layer 28 is improved. |
