| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging element in which low noise and high image quality can be realized by suppressing reset noise produced in the reset operation of pixel without deviating significantly from a general purpose CMOS process. SOLUTION: Each solid state imaging element comprises a photodiode, a field effect transistor having a gate electrode connected with the output of the photodiode, a first feedback circuit connecting the gate electrode and the drain electrode of the field effect transistor and inserted in series with a first switch means, a second feedback circuit connecting the gate electrode and the drain electrode of the field effect transistor and inserted in series with a second switch means and a first capacitor, and a second capacitor having one end connected between the first capacitor and the second switch and the other end of fixed potential.
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