| 摘要 |
PROBLEM TO BE SOLVED: To provide a method an a system for manufacturing a semiconductor element, using a polysilicon hard mask. SOLUTION: A first layer is formed on a semiconductor substrate, and a polysilicon hard mask for exposing a part of the first layer is formed on the first layer. The exposed part of the first layer is dry etched using the polsilicon hard mask as an etching mask to make an opening in the first layer. Subsequently, the polysilicon hard mask is dry etched, using etching gas supplied in a direction substantially parallel with the major surface of the semiconductor substrate. According to the method, etching rate of the etching gas can be controlled uniformly and accurately over the entire surface of the semiconductor substrate. Even when a film containing silicon is exposed to the bottom face of the opening, the polysilicon hard mask covering the upper surface of the semiconductor substrate can be removed effectively, without causing damages to the film.
|
