发明名称 METHOD OF REMOVING OXIDE FILM FROM CHIP ELECTRODE AND THE LIKE
摘要 PROBLEM TO BE SOLVED: To provide a method of reducing a contact pressure and extending a service life of a thin probe by removing an oxide film from a chip electrode easily without requiring any special post-treatment. SOLUTION: The fine particles 8a of pulverized dry ice 8 are injected by high-pressure air against a chip electrode 12a of a wafer 11 through a nozzle 6 so as to remove oxide film from the surface of the electrode. In addition, after the chip electrode 12a is polished with a polishing disk 14, the pulverized dry ice fine particles 8a are injected against the chip electrode region by the high-pressure air so as to remove the oxide film and blow off polishing powder.
申请公布号 JP2001174521(A) 申请公布日期 2001.06.29
申请号 JP19990376900 申请日期 1999.12.20
申请人 DAITO:KK 发明人 KURIHARA MITSUGI
分类号 G01R31/28;G01R1/06;H01L21/304;H01L21/66;(IPC1-7):G01R31/28 主分类号 G01R31/28
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