| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which sufficient contact can be ensured between first and second gate electrodes even when a contact hole of micro diameter is made in a semiconductor device subjected to fine patterning. SOLUTION: A first poly-Si film is formed on an interlayer insulation film, a specified position is opened by photolithography and etching, a second poly-Si film is formed on the surface of the first poly-Si film and etched over the entire surface, the second poly-Si film is left only on the sidewall of the first poly-Si film as a mask film, a contact hole opening on a first gate electrode is made by etching a specified position of the interlayer insulation film, a BARC film is applied on the entire surface including the inside of contact hole, and then the BARC film and the poly-Si mask film are removed by etching on conditions that the etching rate of the BARC film is lower than that of the poly-Si mask film.
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