MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent deterioration of a semiconductor substrate, in a method of manufacturing a semiconductor device that includes a step of dissolving and removing a silicon nitride film and silicon nitrogen oxide. SOLUTION: This method comprises a step of forming a silicon nitride film or a silicon nitrogen oxide film 19 on a silicon substrate 11 and forming a silicon oxide film 20 thereon, and a step of successively removing the silicon oxide film 20 and the silicon nitride film or the silicon nitrogen oxide film 19 by using hydrogen fluoride solution at a temperature of 40 to 100 deg.C and at a concentration of 0.03 to 0.6 wt.%.