| 摘要 |
PROBLEM TO BE SOLVED: To provide a SRAM, which can be miniaturized. SOLUTION: The drain of a driving transistor Q3 and the drain of a load transistor Q5 are connected by a drain-drain connecting layer 31a. The drain of a driving transistor Q4 and the drain of a load transistor Q6 are connected by a drain-drain connecting layer 31b. A gate electrode (gate electrode layer 21a) and the drain-drain connecting layer 31b of the driving transistor Q3 and the load transistor Q5 are connected by a drain-gate connecting layer 41b. A gate electrode (gate electrode layer 21b) and the drain-drain connecting layer 31a of the driving transistor Q4 and the load transistor Q6 are connected by a drain-gate connecting layer 41a. |
