| 摘要 |
PROBLEM TO BE SOLVED: To obtain an insulated gate FET of microcrystal semiconductor structure with lattice distortion. SOLUTION: A silicon oxide film 12 is formed on a glass substrate 11, and an a-Si film 13 is formed thereon through an RF sputtering method and turned to microcrystal in a hydrogen atmosphere. The microcrystal semiconductor film 13 is of crystal structure and 5 to 400Åin average grain diameter based on the half band width of a Raman spectrum, 5 cm2 to 300 cm2/Vsec in electron mobility, and 7×1019 cm-3 or below in oxygen concentration. A gate oxide film 15 and an aluminum electrode 16 are formed for formation of an FET. The Raman spectrum of the channel forming region 17 of the FET resides on a wave number side lower than the peak value 520 cm-1 of a single crystal silicon, and the crystal of the semiconductor film 13 is possessed of a lattice distortion and kept free from barriers.
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