| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and a method of fabrication, in which the contact resistance of an Al alloy interconnection can be prevented from increasing in a contact hole by preventing formation of reaction products with Al when a contact hole is made in an interlayer insulation film by etching. SOLUTION: The method for fabricating a semiconductor device comprises a step for forming a Ti silicide film 17 on a first Al-Cu alloy film 15, a step for forming a first Al alloy interconnection by patterning the Ti silicide film 17 and the first Al-Cu alloy film 15, a step for forming a second interlayer insulation film 19 on the first Al alloy interconnection 15, a step for making a via hole 19a in the interlayer insulation film 19 above the first Al alloy interconnection 15 by etching the interlayer insulation film 19, and a step for forming a second Al alloy interconnection in the via hole 19a and on the interlayer insulation film 19.
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