| 摘要 |
PROBLEM TO BE SOLVED: To provide a pressure/temperature sensor capable of reducing the manufacturing cost and being miniaturized. SOLUTION: An insulating thin film 91 is formed in the prescribed range off a region except for the diaphragm section 7 of a silicon substrate 1 functioning as a pressure detecting element, a thin film temperature detecting element 92 is newly formed on it, and temperature is detected by utilizing the resistance-temperature characteristic.
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