| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory capable of storing the initial setting data easy in verification and correction with a simple configuration. SOLUTION: This memory has a memory cell array 1 in which non-volatile memory cells are arranged to be electrically rewritable, decoding circuits 4, 7 for selecting a memory cell of the memory cell array 1, a sense amplifier circuit 5 for detecting and amplifying data of the memory cell array 1, and a control circuit 11 for controlling the write-in and erasion operation of data of the memory cell array 1. An initial setting data area 3 in which initial setting data is written is set in the memory cell array 1. The memory is provided wit initial setting data latch circuits 13, 15 for transferring and holding initial setting data read out from the initial setting data region 3. The control circuit 11 controls initial setting operation for reading out initial setting data of the memory cell array 1 and transferring and holding it to the initial setting data latch circuits 13, 15.</p> |
