发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent short-circuit between adjacent electrode bumps due to the flow-out of the eutectic body of metal plating when the electrode bump on a plated semiconductor element is connected with an inner lead. SOLUTION: Plural electrode bumps 5 on the semiconductor element 4 are arranged in series in a direction where the plural inner leads 3 extend, and an electrode bump string 6 is constituted. When the electrode bumps 5 and the inner leads 3 are connected, the eutectic body where the Au plating of the electrode bumps 5 and the Sn plating of the inner leads 3 are fused selectively flows into slits 7 between the electrode bumps. Thus, a short-circuit phenomenon with the adjacent different electrode bump string 6 in terms of electricity can be suppressed.
申请公布号 JP2001176917(A) 申请公布日期 2001.06.29
申请号 JP19990359271 申请日期 1999.12.17
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 MATSUSHIMA YOSHIHIRO
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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