发明名称 PRESSURE SWITCH
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor pressure switch, in which the airtightness of a closed space arranged inside can be maintained for a long time and a chattering hardly occurs in shutting the pressure switch, and which has a fast response speed and low actuating pressure. SOLUTION: On an upper substrate which has an diaphragm, a first electro- conductive layer, a second electro-conductive layer separated from the former and surrounding the former, and a pair of first contact areas formed on the first and second electro-conductive layers are arranged. On a lower substrate opposed to the upper substrate, a concave and a second contact area in the concave are installed, and the first contact area is formed in the concave. When an outside force is applied to the diaphragm, the pressure switch is connected.
申请公布号 JP2001176365(A) 申请公布日期 2001.06.29
申请号 JP19990355937 申请日期 1999.12.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIKAWA EIJI;TSUGAI MASAHIRO;ARAKI TATSU
分类号 G01L9/00;H01H1/00;H01H35/34;H03K17/965;(IPC1-7):H01H35/34 主分类号 G01L9/00
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