发明名称 |
COPPER WIRING SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a copper wiring substrate, capable of promoting an insulating characteristic of an upper film by enhancing planarity on a wiring surface. SOLUTION: The method for manufacturing the copper wiring substrate comprises a step for forming a gate electrode 3 and a gate wire 19 (copper wire) on the substrate, a step for nitriding the surface of the copper wiring to form a copper nitride layer 4 by exposing the substrate into ammonia gas atmosphere or ammonia gas plasma, and a step for forming a gate insulating film 5 constituted of a silicon nitride film on the surface of the copper nitride film. The nitride treatment may be substituted for the reduction process or a forming process of a silicon insulating film with a small ratio of a silicon atom percentage content on the surface of the copper wiring.
|
申请公布号 |
JP2001176878(A) |
申请公布日期 |
2001.06.29 |
申请号 |
JP19990363432 |
申请日期 |
1999.12.21 |
申请人 |
FURONTEKKU:KK |
发明人 |
MORI RYUJI;SAI MOTONARI;YOSHIDA OSAMU;OBA TOMOFUMI |
分类号 |
H01L21/3205;G02F1/1343;H01L21/31;H01L21/768;H01L23/52;(IPC1-7):H01L21/320;G02F1/134 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|