发明名称 COPPER WIRING SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a copper wiring substrate, capable of promoting an insulating characteristic of an upper film by enhancing planarity on a wiring surface. SOLUTION: The method for manufacturing the copper wiring substrate comprises a step for forming a gate electrode 3 and a gate wire 19 (copper wire) on the substrate, a step for nitriding the surface of the copper wiring to form a copper nitride layer 4 by exposing the substrate into ammonia gas atmosphere or ammonia gas plasma, and a step for forming a gate insulating film 5 constituted of a silicon nitride film on the surface of the copper nitride film. The nitride treatment may be substituted for the reduction process or a forming process of a silicon insulating film with a small ratio of a silicon atom percentage content on the surface of the copper wiring.
申请公布号 JP2001176878(A) 申请公布日期 2001.06.29
申请号 JP19990363432 申请日期 1999.12.21
申请人 FURONTEKKU:KK 发明人 MORI RYUJI;SAI MOTONARI;YOSHIDA OSAMU;OBA TOMOFUMI
分类号 H01L21/3205;G02F1/1343;H01L21/31;H01L21/768;H01L23/52;(IPC1-7):H01L21/320;G02F1/134 主分类号 H01L21/3205
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