| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a highly reliable semiconductor storage device in which a resist layer does not become thin at the end of a memory cell array and the overetch margin is enlarged. SOLUTION: In the method for fabricating a dynamic random access memory having a data storage capacitor structure and a data transfer gate, a dummy gate member 13 wider than the transfer gate 12 is formed together with the transfer gate 12 contiguously to the end of an array of the transfer gate 12 prior to a step for forming the capacitor structure 16 on the transfer gate 12 through an interlayer dielectric. When an insulation film 17 is formed following to formation of the capacitor structure 16, level difference of the insulation film 17 is relaxed at the end of an array of the transfer gate 12 and a resist layer formed thereon does not become thin. |
