| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory and a redundancy method of this memory in which repair efficiency can be increased by enabling repair separating respectively banks, blocks, and column address groups depending on a form of defect. SOLUTION: A redundancy circuit of a semiconductor memory is constituted of a mode setting circuit generating a mode signal, an input selecting circuit responding to 1 mode signal and generating a selecting signal, and a decoding circuit responding to a mode selecting signal and generating a decoding signal. A redundancy mode signal is constituted of a bank redundancy mode signal, an array redundancy mode signal, and a column address group redundancy mode signal. |
