| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of lowering a manufacturing cost and improving productivity. SOLUTION: The method for forming the semiconductor device comprises a step for forming a wiring groove 3 on an insulating layer 2, a step for forming a barrier layer 4 in the wiring groove 3 and on the insulating film 2, a step for forming a metallic wiring 5 on the barrier film 4, a step for removing unnecessary portion in the metallic wiring 5 by means of CMP method, and a step for removing unwanted portion in the barrier film 4 by means of wet etching method.
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