发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PRODUCING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To deposit the barrier conductor film and seed film of necessary and sufficient thickness with a little thickness difference inside a wiring groove and a connecting hole formed on the bottom of that wiring groove. SOLUTION: In a process for forming a connecting hole 16a and a wiring groove 16b on an insulating film 15 and forming a barrier conductor film 102 and a seed film 103 inside these connecting hole 16a and wiring groove, the connecting hole 16a is formed so that the bottom can become a forward taper thinner than the upper part, and the wiring groove 16b is formed so that a sidewall 16d can be perpendicular to the bottom of the wiring groove 16b. Further, it is formed so that a sidewall 16c and the sidewall 16d can be continued without being step-shaped.
申请公布号 JP2001176968(A) 申请公布日期 2001.06.29
申请号 JP19990363500 申请日期 1999.12.21
申请人 HITACHI LTD 发明人 SAITO TATSUYUKI;ASHIHARA YOJI
分类号 H01L21/768;H01L21/28;H01L21/3205;(IPC1-7):H01L21/768 主分类号 H01L21/768
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