| 摘要 |
An integrated circuit incorporates some MOS logic transistors, some EPROM cells and some high voltage MOS transistors, in which:- a) each EPROM cell comprises a floating grill made up from a first level of polycrystalline silicon above an oxide tunnel and a control grill made from a second level of polycrystalline silicon; b) each MOS logic transistor comprises a grill made from a portion of the second level of polycrystalline silicon above a very thin oxide; c) each high voltage transistor comprises a grill (205) corresponding to a portion of the first level of polycrystalline silicon above a layer of the oxide tunnel, the grill (205) being covered by a portion (211) of the second layer of polycrystalline silicon except at some emplacements (205-1) where one wishes to take a contact on the grill (205). Moreover the apparent part (205-1) of the first layer of polycrystalline silicon in the high voltage MOS transistors is coated with a layer of silicon nitride. An Independent claim is made for the method of fabricating an integrated circuit in accordance with the main claim. |
