发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF SWITCHING INTERNAL VOLTAGE
摘要 PROBLEM TO BE SOLVED: To greatly enhance the yield of manufacture, by relieving a voltage generating circuit which generates reference voltage beyond a trimming range. SOLUTION: At probe inspection, the reference voltages VREF of reference voltage circuits 11-14 and 15-18 are measured to perform the relief decision. The setting is performed so that the reference voltage VREF may come closer to the design value, by performing the trimming for only the reference voltage circuit being decided to be up to the standard, if any reference voltage circuit is decided to be short of standard among the reference voltage circuits 11-14 and 15-18. A reference voltage circuit which measures the reference voltage VREF of the trimmed reference voltage circuit and generates the reference voltage VREF which is the closet to the design value is detected. The fuses provided in reference voltage selectors 19-22 are cut to switch the destination of connection, and the reference voltage VREF generated by the reference voltage circuit is supplied to internal circuits which supply reference voltages VREF, being provided in all DRAM macros 2-5.
申请公布号 JP2001177065(A) 申请公布日期 2001.06.29
申请号 JP19990359867 申请日期 1999.12.17
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 SUZUKI TSUYUKI;YAMAZAKI EIJI;KATAYAMA MASAHIRO
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
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