METHOD FOR PRODUCING HIGH PLANARITY SEMICONDUCTOR WAFER, AND HIGH PLANARITY SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high planarity semiconductor wafer and a high planarity semiconductor wafer, in which high planarity is attained, without leaving machining flaws due to plasma scanning on the surface. SOLUTION: The method for producing a high planarity semiconductor wafer by machining a semiconductor wafer through plasma etching comprises a step S5 for measuring the thickness distribution of the semiconductor wafer, and a step S7 for locally plasma etching the rear surface of the semiconductor wafer, while varying the etching amount depending on the thickness distribution measured in the planarity measuring step, thus planarizing the rear surface of the semiconductor wafer.