| 摘要 |
PROBLEM TO BE SOLVED: To provide a stacked semiconductor device with high quality by preventing the shape from being destroyed due to etching. SOLUTION: A pattern film 3 on which an outside connection pattern 2 is formed is laminated on a glass board 1, a wafer 5 is laminated through an insulating adhesive 7 on the pattern film, and the wafer is diced, and made thin by operating silicon etching. Also, the interval of the dicing groove is widened, and a wiring lead is allowed to remain. The lamination of the wafer through the insulating adhesive on the silicon etched wafer, the dicing, the silicon etching, and the application of the insulating adhesive is repeated so that a wafer laminate 7 having plural stages can be constituted. Then, a through-hole 8 is perforated at the dicing part and near the chip other than the dicing part, and conductive metal 9 is formed at the through-hole so that a vertical wiring line 10 on which the in-wafer chip in each hierarchy can be electrically connected can be formed. Then, a glass board is peeled, and an outside connecting terminal 12 is formed at the outside connection pattern, and the dicing part at which the vertical wiring line is formed is cut so that the stacked semiconductor device can be manufactured. |
