发明名称 SYSTEM FOR PROCESSING EXHAUST GAS OF DRY ETCHING
摘要 <p>PROBLEM TO BE SOLVED: To introduce exhaust gas for processing exhaust gas from a dry etching system, containing a sublimational substance into an exhaust gas processing system, without depositing the sublimational substance in the exhaust gas passage. SOLUTION: The system for processing exhaust gas of dry etching comprises vacuum generators Pa, Pb, Pc for sustaining vacuum in dry etching systems A, B, C, means 2a, 2b, 2c for supplying nitrogen to the vacuum generators, and a system D for processing exhaust gas from the dry etching system, where the nitrogen supplying means comprises means 3a, 3b, 3c for heating nitrogen being supplied to the vacuum generators. Preferably, an intermediate vacuum generator 5 is provided, in order to sustain vacuum in an exhaust gas passage.</p>
申请公布号 JP2001176854(A) 申请公布日期 2001.06.29
申请号 JP19990357353 申请日期 1999.12.16
申请人 SUMITOMO SEIKA CHEM CO LTD 发明人 HISHIIKE MICHITAKA;HOSONAKA KENZO;NAGATA KENJI
分类号 B01D53/34;B01D53/68;B01D53/77;C23F4/00;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 B01D53/34
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