摘要 |
<p>PROBLEM TO BE SOLVED: To introduce exhaust gas for processing exhaust gas from a dry etching system, containing a sublimational substance into an exhaust gas processing system, without depositing the sublimational substance in the exhaust gas passage. SOLUTION: The system for processing exhaust gas of dry etching comprises vacuum generators Pa, Pb, Pc for sustaining vacuum in dry etching systems A, B, C, means 2a, 2b, 2c for supplying nitrogen to the vacuum generators, and a system D for processing exhaust gas from the dry etching system, where the nitrogen supplying means comprises means 3a, 3b, 3c for heating nitrogen being supplied to the vacuum generators. Preferably, an intermediate vacuum generator 5 is provided, in order to sustain vacuum in an exhaust gas passage.</p> |